thru 1 0 a m p s cho t t k y b a r r i er rectifier features maximum ratings operating temperature: -5 5 c to +150 c storage temperature: -5 5 c to +175 c mcc catalog number device marking maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage www. mccsemi .com metal of siliconrectifier, majonty carrier conducton guard ring for transient protection low power loss high efficiency high surge capacity, high current capability 30-60 volts pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h to-220ab pin 13 2 MBR1035CT MBR1035CT 35v 24.5v 35v mbr1040ct mbr1040ct 40v 28v 40v mbr1045ct mbr1045ct 45v 31.5v 45v mbr1050ct mbr1050ct 50v 35v 50v mbr1060ct mbr1060ct 60v 42v 60v mbr1030ct mbr1030ct 30v 21v 30v mbr1030ct mbr1060ct electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 10a t c = 105 c maximum forward voltage drop per element maximum dc reverse current at rated dc blocking voltage ir *pulse test: pulse width 300 m sec, duty cycle 2 % t j = 1 25 c peak forward surge current i fsm 125a 8.3ms, half sine 15m a 0.1m a t j = 25 c v f .70v i fm = 5a t j = 25 c mbr1030ct-45ct mbr1050ct-60ct mbr1030ct-45ct mbr1050ct-60ct . 8 0v . 57 v . 65 v i fm = 5a t j = 125 c typical junction capacitance mbr1030ct-45ct mbr1050ct-60ct 220pf 170pf c j mea s u r ed at 1.0mhz, v r =4.0v
omp onents 2 0736 marilla street chatsworth ! " # $
% ! " # mcc revision: 4 2003/07/24 inches mm
a .570 .620 14.48 15.75 b .380 .405 9.66 10.28 n 0.102ty p. 2.6typ. c .1 0 0 .120 2 . 54 3.04 d .235 .255 5.97 6.48 e .3 3 5 .3 6 5 8.51 9.27 f .110 .1 5 5 2.80 3.93 g .500 .562 1 2.70 1 4 .27 h .0 9 5 .105 2.42 2.66 i .0 2 5 .035 0.64 0.89 j .0 16 .0 2 5 0.41 0.64 k .1 4 2 .1 47 3.61 3.73 l .160 .190 4.06 4.82 m .0 4 5 .0 5 5 1.14 1.39
rating and characteristic curves m b r 1 0 30 c t thru mbr1060ct fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 25 50 75 100 125 150 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 4 0 50 16 175 percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0.001 0.1 1.0 100 10 60 80 100 t j = 125 c 0.01 t j = 25 c 8.3ms single half-sine-wave (jedec method) 12 0 8 resistive or inductive load instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 instantaneous forward voltage , volts instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 1000 100 10 0.1 case temperature , c 0 4 mbr1050ct ~ mbr1060ct mbr1030ct ~ mbr1045ct mbr1030ct ~ mbr1045ct mbr1050ct ~ mbr1060ct t j = 25 c, f= 1mhz ww w . mccsemi .com mcc revision: 7 2003/07/24
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